In a p-n junction, the formation of a potential barrier and depletion region occurs due to the diffusion of majority charge carriers. When a p-type semiconductor (with positive charge carriers, or "holes") is brought into contact with an n-type semiconductor (with negative charge carriers, or "electrons"), diffusion takes place. Electrons from the n-side diffuse towards the p-side, while holes from the p-side diffuse towards the n-side. This diffusion process continues until equilibrium is...

Fermi energy refers to the highest energy level occupied by an electron at absolute zero temperature in a material. It is a concept from quantum mechanics and is named after the Italian physicist Enrico Fermi.

The Fermi energy level, also known as the Fermi level, is the energy level that separates filled electron states from empty states in a material. It serves as a reference point for describing the behavior of electrons in a material, particularly in metals and semiconductors. At absolute...

Electrons are negatively charged particles in atoms that carry current in conductors, whereas holes are vacant states in a semiconductor's valence band, which act like positively charged particles. Electrons move by gaining energy, while holes move by losing energy, resulting in opposite current flow directions.

P-type and N-type semiconductors are formed through a process called doping. In P-type doping, impurities with fewer valence electrons than the semiconductor material, such as boron or gallium, are introduced, creating positively charged "holes" as the majority charge carriers. In N-type doping, impurities with more valence electrons, like phosphorus or arsenic, are added, resulting in an excess of negatively charged electrons as the majority charge carriers. Doping alters the electrical...