Ans: When the pure semiconductor (like Ge or Si) is doped with trivalent impurities (like Aluminium, Indium, Gallium, etc) only three electron of impurity element (Al) share with semi conductor atom (Si) leaving a hole. An P-type semiconductor has a large number of holes but still it is electrically neutral.

P-type and N-type semiconductors are formed through a process called doping. In P-type doping, impurities with fewer valence electrons than the semiconductor material, such as boron or gallium, are introduced, creating positively charged "holes" as the majority charge carriers. In N-type doping, impurities with more valence electrons, like phosphorus or arsenic, are added, resulting in an excess of negatively charged electrons as the majority charge carriers. Doping alters the electrical...

Electrons are negatively charged particles in atoms that carry current in conductors, whereas holes are vacant states in a semiconductor's valence band, which act like positively charged particles. Electrons move by gaining energy, while holes move by losing energy, resulting in opposite current flow directions.

In a p-n junction, the formation of a potential barrier and depletion region occurs due to the diffusion of majority charge carriers. When a p-type semiconductor (with positive charge carriers, or "holes") is brought into contact with an n-type semiconductor (with negative charge carriers, or "electrons"), diffusion takes place. Electrons from the n-side diffuse towards the p-side, while holes from the p-side diffuse towards the n-side. This diffusion process continues until equilibrium is...